MBR12035CTR GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 120A 2TOWER
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
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Технічний опис MBR12035CTR GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 120A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 120A (DC), Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 35 V, Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120, Voltage Coupled to Current - Reverse Leakage @ Vr: 20, Current - Reverse Leakage @ Vr: 3 mA @ 20 V.
Інші пропозиції MBR12035CTR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
MBR12035 CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120 Voltage Coupled to Current - Reverse Leakage @ Vr: 20 Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. |
 |
MBR12035CTR | GeneSiC Semiconductor |
Diode Modules 35V 120A Schottky Recovery |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. |
| MBR12035 CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| MBR12035CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules 35V 120A Schottky Recovery
Diode Modules 35V 120A Schottky Recovery
товару немає в наявності
Мінімальне замовлення: 40 шт
В кошику
од. на суму грн.