MBR12035CT GeneSiC Semiconductor

Description: DIODE MOD SCHOTT 35V 120A 2TOWER, Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A, Voltage - DC Reverse (Vr) (Max): 35 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Twin Tower, Current - Average Rectified (Io) (per Diode): 120A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Twin Tower, Packaging: Bulk, Current - Reverse Leakage @ Vr: 3 mA @ 20 V, Voltage Coupled to Current - Reverse Leakage @ Vr: 20, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120.