Технічний опис MBR20H150CT-E3/45 Vishay Semiconductors
Description: DIODE ARR SCHOT 150V 10A TO220-3, Current - Reverse Leakage @ Vr: 5 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A, Voltage - DC Reverse (Vr) (Max): 150 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-220-3, Current - Average Rectified (Io) (per Diode): 10A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції MBR20H150CT-E3/45
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
MBR20H150CT-E3/45 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 150V 10A TO220-3Current - Reverse Leakage @ Vr: 5 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |

