MBR2X080A080 GeneSiC Semiconductor

Description: DIODE MOD SCHOTT 80V 80A SOT227, Current - Reverse Leakage @ Vr: 1 mA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A, Voltage - DC Reverse (Vr) (Max): 80 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 80A, Diode Configuration: 2 Independent, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Bulk.