MBR3535 GeneSiC Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 1376.74 грн |
| 10+ | 1152.46 грн |
| 25+ | 939.55 грн |
| 100+ | 850.94 грн |
| 250+ | 829.14 грн |
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Технічний опис MBR3535 GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 35A DO4, Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A, Voltage - DC Reverse (Vr) (Max): 35 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-4, Current - Average Rectified (Io): 35A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Bulk.