MBR3560 GeneSiC Semiconductor

Description: DIODE SCHOTTKY 60V 35A DO4, Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A, Voltage - DC Reverse (Vr) (Max): 60 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-4, Current - Average Rectified (Io): 35A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Bulk.