MBR400100CTR GeneSiC Semiconductor
Виробник: GeneSiC SemiconductorDescription: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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Технічний опис MBR400100CTR GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 200A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Reverse Polarity, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 200A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A, Current - Reverse Leakage @ Vr: 5 mA @ 20 V.
Інші пропозиції MBR400100CTR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MBR400100CTR | Виробник : GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 400A100P/70 |
товару немає в наявності |