Технічний опис MBR40035CTR GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 200A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Reverse Polarity, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 200A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 35 V, Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 A, Current - Reverse Leakage @ Vr: 1 mA @ 35 V.
Інші пропозиції MBR40035CTR
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MBR40035CTR | Виробник : GeneSiC Semiconductor |
 Description: DIODE MOD SCHOTT 35V 200A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 A Current - Reverse Leakage @ Vr: 1 mA @ 35 V |
товару немає в наявності |
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MBR40035CTR | Виробник : GeneSiC Semiconductor |
Diode Modules 35V 400A Schottky Recovery |
товару немає в наявності |