Технічний опис MBR5100MFST1G onsemi
Description: DIODE SCHOTTKY 100V 5A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 5A, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Інші пропозиції MBR5100MFST1G
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MBR5100MFST1G | Виробник : ON Semiconductor |
 Rectifier Diode Schottky 100V 5A 5-Pin(4+Tab) SO-FL T/R |
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MBR5100MFST1G | Виробник : onsemi |
Description: DIODE SCHOTTKY 100V 5A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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MBR5100MFST1G | Виробник : onsemi |
Description: DIODE SCHOTTKY 100V 5A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товар відсутній |