MBR600100CT DACO Semiconductor
Виробник: DACO Semiconductor
Description: DIODE MODULE SCHOTTKY 100V 300A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 300 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Технічний опис MBR600100CT DACO Semiconductor
Description: DIODE MODULE SCHOTTKY 100V 300A, Current - Reverse Leakage @ Vr: 1 mA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 300 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -55°C ~ 150°C, Current - Average Rectified (Io) (per Diode): 300A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Інші пропозиції MBR600100CT
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
MBR600100CT | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 600A100P/70 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MBR600100CT | DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 100V; If: 300Ax2; Twin tower Max. off-state voltage: 0.1kV Load current: 300A x2 Semiconductor structure: common cathode; double Case: Twin tower Max. forward voltage: 0.84V Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode Max. forward impulse current: 4kA Features of semiconductor devices: Schottky |
товару немає в наявності |
В кошику од. на суму грн. |
| MBR600100CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 600A100P/70
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 600A100P/70
товару немає в наявності
В кошику
од. на суму грн.
| MBR600100CT |
|
Виробник: DACO Semiconductor
Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 300Ax2; Twin tower
Max. off-state voltage: 0.1kV
Load current: 300A x2
Semiconductor structure: common cathode; double
Case: Twin tower
Max. forward voltage: 0.84V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Max. forward impulse current: 4kA
Features of semiconductor devices: Schottky
Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 300Ax2; Twin tower
Max. off-state voltage: 0.1kV
Load current: 300A x2
Semiconductor structure: common cathode; double
Case: Twin tower
Max. forward voltage: 0.84V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Max. forward impulse current: 4kA
Features of semiconductor devices: Schottky
товару немає в наявності
В кошику
од. на суму грн.