MBR600200CT GeneSiC Semiconductor

Description: DIODE MOD SCHOT 200V 300A 2TOWER, Current - Reverse Leakage @ Vr: 3 mA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Twin Tower, Current - Average Rectified (Io) (per Diode): 300A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Twin Tower, Packaging: Bulk.