Технічний опис MBR600200CTR GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 300A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 300A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A, Current - Reverse Leakage @ Vr: 3 mA @ 200 V.
Інші пропозиції MBR600200CTR
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MBR600200CTR | Виробник : GeneSiC Semiconductor |
 Description: DIODE MOD SCHOT 200V 300A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
товару немає в наявності |
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MBR600200CTR | Виробник : GeneSiC Semiconductor |
Diode Modules 150V 600A Reverse |
товару немає в наявності |