MBR8035 GeneSiC Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 1896.92 грн |
| 10+ | 1575.43 грн |
| 25+ | 1284.85 грн |
| 100+ | 1199.75 грн |
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Технічний опис MBR8035 GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 80A DO5, Current - Reverse Leakage @ Vr: 1 mA @ 35 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A, Voltage - DC Reverse (Vr) (Max): 35 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: DO-5, Current - Average Rectified (Io): 80A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AB, DO-5, Stud, Packaging: Bulk.