MBR8170TFSTXG onsemi
Виробник: onsemiDescription: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
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Технічний опис MBR8170TFSTXG onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 237pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: 8-WDFN (3.3x3.3), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 170 V, Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A, Current - Reverse Leakage @ Vr: 30 µA @ 170 V.
Інші пропозиції MBR8170TFSTXG
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MBR8170TFSTXG | Виробник : onsemi |
Description: DIODE SCHOTTKY 170V 8A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 237pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 170 V |
товару немає в наявності |