| Кількість | Ціна |
|---|---|
| 9+ | 38.65 грн |
| 10+ | 32.58 грн |
| 100+ | 21.07 грн |
| 500+ | 16.63 грн |
| 1000+ | 12.05 грн |
| 2500+ | 11.63 грн |
| 5000+ | 11.00 грн |
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Технічний опис MBRM110ET3G onsemi
Description: DIODE SCHOTTKY 10V 1A POWERMITE, Current - Reverse Leakage @ Vr: 1 µA @ 10 V, Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 10 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Powermite, Current - Average Rectified (Io): 1A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-216AA, Packaging: Tape & Reel (TR).
Інші пропозиції MBRM110ET3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MBRM110ET3G | onsemi |
 Description: DIODE SCHOTTKY 10V 1A POWERMITECurrent - Reverse Leakage @ Vr: 1 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 10 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Powermite Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-216AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRM110ET3G | onsemi |
Description: DIODE SCHOTTKY 10V 1A POWERMITE Packaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
| MBRM110ET3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 10V 1A POWERMITE
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 10V 1A POWERMITE
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| MBRM110ET3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 10V 1A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE SCHOTTKY 10V 1A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.