MBRT200100

MBRT200100 GeneSiC Semiconductor


mbrt200100.pdf Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 66 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+6768.01 грн
10+ 5716.22 грн
25+ 5425.63 грн
50+ 4894.69 грн
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Технічний опис MBRT200100 GeneSiC Semiconductor

Description: DIODE MOD SCHOT 100V 100A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.

Інші пропозиції MBRT200100

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
MBRT200100 MBRT200100 Виробник : GeneSiC Semiconductor mbrt200100.pdf Rectifier Diode Schottky 100V 200A 3-Pin Three Tower
товар відсутній
MBRT200100 Виробник : DACO Semiconductor MBRT20080(R)-MBRT200100(R).pdf Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 100Ax2; TO240AB
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 100V
Load current: 100A x2
Case: TO240AB
Max. forward voltage: 0.84V
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Leakage current: 8µA
кількість в упаковці: 1 шт
товар відсутній
MBRT200100 MBRT200100 Виробник : GeneSiC Semiconductor mbrt200100-2451640.pdf Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A100P/70
товар відсутній
MBRT200100 Виробник : DACO Semiconductor MBRT20080(R)-MBRT200100(R).pdf Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 100Ax2; TO240AB
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 100V
Load current: 100A x2
Case: TO240AB
Max. forward voltage: 0.84V
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Leakage current: 8µA
товар відсутній