Технічний опис MBRT200100R GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 100A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Reverse Polarity, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Інші пропозиції MBRT200100R
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MBRT200100R | Виробник : DACO Semiconductor |
 MBRT200100R-DCO Diode modules |
товару немає в наявності |
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MBRT200100R | Виробник : GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
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MBRT200100R | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A100P/70 |
товару немає в наявності |