Технічний опис MBRT200150 GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 100A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A, Current - Reverse Leakage @ Vr: 1 mA @ 150 V.
Інші пропозиції MBRT200150
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| MBRT200150 | Виробник : DACO Semiconductor |
 Category: Diode modulesDescription: Module: diode; double,common cathode; 150V; If: 100Ax2; TO240AB Electrical mounting: screw Mechanical mounting: screw Case: TO240AB Type of module: diode Features of semiconductor devices: Schottky Max. off-state voltage: 150V Max. forward voltage: 0.88V Load current: 100A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 1.5kA Leakage current: 8µA кількість в упаковці: 1 шт |
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MBRT200150 | Виробник : GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 150V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
товар відсутній |
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MBRT200150 | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules 150V 200A Forward |
товар відсутній |
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| MBRT200150 | Виробник : DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 150V; If: 100Ax2; TO240AB Electrical mounting: screw Mechanical mounting: screw Case: TO240AB Type of module: diode Features of semiconductor devices: Schottky Max. off-state voltage: 150V Max. forward voltage: 0.88V Load current: 100A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 1.5kA Leakage current: 8µA |
товар відсутній |