MBRT200200 GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 100A 3TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Відгуки про товар
Написати відгук
Технічний опис MBRT200200 GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 100A 3TOWER, Current - Reverse Leakage @ Vr: 1 mA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 100A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Інші пропозиції MBRT200200
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
MBRT200200 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 200V 200A Forward |
товару немає в наявності |
Мінімальне замовлення: 80 шт В кошику од. на суму грн. |
| MBRT200200 | DACO Semiconductor |
Category: Diode modulesDescription: Module: diode; double,common cathode; 200V; If: 100Ax2; TO240AB Semiconductor structure: common cathode; double Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Features of semiconductor devices: Schottky Case: TO240AB Max. forward voltage: 0.92V Load current: 100A x2 Max. off-state voltage: 200V Max. forward impulse current: 1.5kA |
товару немає в наявності |
В кошику од. на суму грн. |
| MBRT200200 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 200V 200A Forward
Discrete Semiconductor Modules 200V 200A Forward
товару немає в наявності
Мінімальне замовлення: 80 шт
В кошику
од. на суму грн.
| MBRT200200 |
![]() |
Виробник: DACO Semiconductor
Category: Diode modules
Description: Module: diode; double,common cathode; 200V; If: 100Ax2; TO240AB
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Features of semiconductor devices: Schottky
Case: TO240AB
Max. forward voltage: 0.92V
Load current: 100A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.5kA
Category: Diode modules
Description: Module: diode; double,common cathode; 200V; If: 100Ax2; TO240AB
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Features of semiconductor devices: Schottky
Case: TO240AB
Max. forward voltage: 0.92V
Load current: 100A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.5kA
товару немає в наявності
В кошику
од. на суму грн.


