Технічний опис MBRT200200R DACO Semiconductor
Description: DIODE MOD SCHOT 200V 100A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A, Current - Reverse Leakage @ Vr: 1 mA @ 200 V.
Інші пропозиції MBRT200200R
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MBRT200200R | Виробник : GeneSiC Semiconductor |
 Description: DIODE MOD SCHOT 200V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
товару немає в наявності |
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MBRT200200R | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules 200V 200A Reverse |
товару немає в наявності |