Технічний опис MBRT20035R GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 100A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 35 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Інші пропозиції MBRT20035R
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MBRT20035R | Виробник : DACO Semiconductor |
 Category: Diode modulesDescription: Module: diode; double,common anode; 35V; If: 100Ax2; TO240AB; screw Type of module: diode Semiconductor structure: common anode; double Max. off-state voltage: 35V Load current: 100A x2 Case: TO240AB Max. forward voltage: 0.7V Max. forward impulse current: 1.5kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Leakage current: 8µA кількість в упаковці: 1 шт |
товар відсутній |
||
 |
MBRT20035R | Виробник : GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товар відсутній |
|
 |
MBRT20035R | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules 35V 200A Schottky Recovery |
товар відсутній |
|
| MBRT20035R | Виробник : DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common anode; 35V; If: 100Ax2; TO240AB; screw Type of module: diode Semiconductor structure: common anode; double Max. off-state voltage: 35V Load current: 100A x2 Case: TO240AB Max. forward voltage: 0.7V Max. forward impulse current: 1.5kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Leakage current: 8µA |
товар відсутній |