MBRT20080R GeneSiC Semiconductor
Виробник: GeneSiC SemiconductorDescription: DIODE MOD SCHOTT 80V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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Технічний опис MBRT20080R GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 100A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Інші пропозиції MBRT20080R
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MBRT20080R | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 80P57R |
товару немає в наявності |