MBRT400100 DACO Semiconductor
Виробник: DACO Semiconductor
Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 200Ax2; TO240AB
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.1kV
Load current: 200A x2
Case: TO240AB
Max. forward voltage: 0.84V
Max. forward impulse current: 3kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
| Кількість | Ціна |
|---|---|
| 1+ | 5276.25 грн |
| 3+ | 4330.16 грн |
| 10+ | 3888.09 грн |
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Технічний опис MBRT400100 DACO Semiconductor
Description: DIODE MOD SCHOT 100V 200A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 200A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Інші пропозиції MBRT400100 за ціною від 6092.95 грн до 8426.07 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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MBRT400100 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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MBRT400100 | GeneSiC Semiconductor |
Diode Modules 100V 400A Schottky Recovery |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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| MBRT400100 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOT 100V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 7995.44 грн |
| MBRT400100 |
|
Виробник: GeneSiC Semiconductor
Diode Modules 100V 400A Schottky Recovery
Diode Modules 100V 400A Schottky Recovery
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 8426.07 грн |
| 10+ | 7345.88 грн |
| 25+ | 6092.95 грн |