MBRT60035L GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 35 V
Description: DIODE MOD SCHOTT 35V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 35 V
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Технічний опис MBRT60035L GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 300A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 300A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 35 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A, Current - Reverse Leakage @ Vr: 3 mA @ 35 V.
Інші пропозиції MBRT60035L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MBRT60035L | Виробник : GeneSiC Semiconductor |
 Schottky Diodes & Rectifiers 35V 600A Forward |
товару немає в наявності |