MCAC25P10YHE3-TP Micro Commercial Components (MCC)
| Кількість | Ціна |
|---|---|
| 3+ | 138.28 грн |
| 10+ | 95.42 грн |
| 100+ | 59.06 грн |
| 500+ | 46.99 грн |
| 1000+ | 43.37 грн |
| 2500+ | 41.97 грн |
| 5000+ | 37.72 грн |
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Технічний опис MCAC25P10YHE3-TP Micro Commercial Components (MCC)
Description: MOSFET P-CH 100 25A DFN5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A, Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V, Power Dissipation (Max): 70W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції MCAC25P10YHE3-TP за ціною від 41.05 грн до 139.62 грн
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MCAC25P10YHE3-TP | Виробник : MCC (Micro Commercial Components) |
 Description: MOSFET P-CH 100 25A DFN5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V Power Dissipation (Max): 70W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3712 шт: термін постачання 21-31 дні (днів) |
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MCAC25P10YHE3-TP | Виробник : MCC (Micro Commercial Components) |
Description: MOSFET P-CH 100 25A DFN5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V Power Dissipation (Max): 70W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |