MCAC25P10YHE3-TP Micro Commercial Components (MCC)
| Кількість | Ціна |
|---|---|
| 3+ | 139.48 грн |
| 10+ | 96.24 грн |
| 100+ | 59.57 грн |
| 500+ | 47.40 грн |
| 1000+ | 43.74 грн |
| 2500+ | 42.34 грн |
| 5000+ | 38.05 грн |
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Технічний опис MCAC25P10YHE3-TP Micro Commercial Components (MCC)
Description: MOSFET P-CH 100 25A DFN5060, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Supplier Device Package: DFN5060, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 70W (Tj), Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active.
Інші пропозиції MCAC25P10YHE3-TP за ціною від 41.40 грн до 140.83 грн
| Фото | Назва | Виробник | Інформація |
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MCAC25P10YHE3-TP | MCC (Micro Commercial Components) |
 Description: MOSFET P-CH 100 25A DFN5060Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN5060 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 70W (Tj) Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 25A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V |
на замовлення 3712 шт: термін постачання 21-31 дні (днів) |
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| MCAC25P10YHE3-TP |
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Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 100 25A DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Description: MOSFET P-CH 100 25A DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
на замовлення 3712 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 140.83 грн |
| 10+ | 86.62 грн |
| 100+ | 58.66 грн |
| 500+ | 43.78 грн |
| 1000+ | 41.40 грн |