MCAC80P06YHE3-TP Micro Commercial Components (MCC)
| Кількість | Ціна |
|---|---|
| 3+ | 147.68 грн |
| 10+ | 121.31 грн |
| 100+ | 84.39 грн |
| 250+ | 78.06 грн |
| 500+ | 70.33 грн |
| 1000+ | 62.59 грн |
| 5000+ | 55.35 грн |
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Технічний опис MCAC80P06YHE3-TP Micro Commercial Components (MCC)
Description: MOSFET P-CH 60 80A DFN5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Power Dissipation (Max): 120W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DFN5060, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції MCAC80P06YHE3-TP за ціною від 61.44 грн до 188.30 грн
| Фото | Назва | Виробник | Інформація |
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MCAC80P06YHE3-TP | MCC (Micro Commercial Components) |
 Description: MOSFET P-CH 60 80A DFN5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 120W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN5060 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 4807 шт: термін постачання 21-31 дні (днів) |
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| MCAC80P06YHE3-TP |
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Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 60 80A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60 80A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4807 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 188.30 грн |
| 10+ | 116.87 грн |
| 100+ | 80.36 грн |
| 500+ | 61.44 грн |