MCAC85N04YHE3-TP Micro Commercial Co
Виробник: Micro Commercial Co
Description: POWER MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1171 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 20 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tj)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
| Кількість | Ціна |
|---|---|
| 5000+ | 28.03 грн |
| 10000+ | 25.98 грн |
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Технічний опис MCAC85N04YHE3-TP Micro Commercial Co
Description: POWER MOSFET, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1171 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 20 V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: DFN5060, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 100W (Tj), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), FET Type: N-Channel.
Інші пропозиції MCAC85N04YHE3-TP за ціною від 26.23 грн до 69.78 грн
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MCAC85N04YHE3-TP | Micro Commercial Co |
Description: POWER MOSFET Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 100W (Tj) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1171 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 20 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: DFN5060 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
| MCAC85N04YHE3-TP |
|
Виробник: Micro Commercial Co
Description: POWER MOSFET
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tj)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1171 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DFN5060
Description: POWER MOSFET
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tj)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1171 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DFN5060
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 69.78 грн |
| 10+ | 59.86 грн |
| 25+ | 56.84 грн |
| 100+ | 43.80 грн |
| 250+ | 40.95 грн |
| 500+ | 36.19 грн |
| 1000+ | 28.10 грн |
| 2500+ | 26.23 грн |