MCACD033N10YLHE3-TP Micro Commercial Components (MCC)
на замовлення 10000 шт:
термін постачання 161-170 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 90.76 грн |
| 10+ | 60.60 грн |
| 100+ | 39.92 грн |
| 500+ | 33.91 грн |
| 1000+ | 27.59 грн |
| 5000+ | 24.51 грн |
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Технічний опис MCACD033N10YLHE3-TP Micro Commercial Components (MCC)
Description: DUAL N-CHANNEL MOSFET,PDFN5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 41W (Tj), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V, Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PDFN5060-8D, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції MCACD033N10YLHE3-TP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MCACD033N10YLHE3-TP | Виробник : MCC (Micro Commercial Components) |
Description: DUAL N-CHANNEL MOSFET,PDFN5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W (Tj) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PDFN5060-8D Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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MCACD033N10YLHE3-TP | Виробник : MCC (Micro Commercial Components) |
Description: DUAL N-CHANNEL MOSFET,PDFN5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W (Tj) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PDFN5060-8D Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |