
MCB200N06Y-TP MCC (Micro Commercial Components)

Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 260W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V
на замовлення 660 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
2+ | 208.79 грн |
10+ | 130.12 грн |
100+ | 89.46 грн |
Відгуки про товар
Написати відгук
Технічний опис MCB200N06Y-TP MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET, D2-PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V, Power Dissipation (Max): 260W (Tj), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V.
Інші пропозиції MCB200N06Y-TP
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
MCB200N06Y-TP | Виробник : Micro Commercial Components |
![]() |
товару немає в наявності |
|
![]() |
MCB200N06Y-TP | Виробник : MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 260W (Tj) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V |
товару немає в наявності |
|
|
MCB200N06Y-TP | Виробник : Micro Commercial Components (MCC) |
![]() |
товару немає в наявності |