Відгуки про товар
Написати відгук
Технічний опис MCB40P1200LB-TRR IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 55A, Case: SMPD-B, Gate-source voltage: -5...20V, On-state resistance: 34mΩ, Mounting: SMD, Gate charge: 161nC, Kind of package: reel; tape, Kind of channel: enhancement, Semiconductor structure: double series.
Інші пропозиції MCB40P1200LB-TRR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MCB40P1200LB-TRR | IXYS |
 MOSFET Modules SiC MOSFET phaseleg 25mO SMPD-B |
товару немає в наявності |
В кошику од. на суму грн. | |
| MCB40P1200LB-TRR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Case: SMPD-B Gate-source voltage: -5...20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 161nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: double series |
товару немає в наявності |
В кошику од. на суму грн. |
| MCB40P1200LB-TRR |
|
Виробник: IXYS
MOSFET Modules SiC MOSFET phaseleg 25mO SMPD-B
MOSFET Modules SiC MOSFET phaseleg 25mO SMPD-B
товару немає в наявності
В кошику
од. на суму грн.
| MCB40P1200LB-TRR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
товару немає в наявності
В кошику
од. на суму грн.