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Технічний опис MCB40P1200LB-TUB IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 55A, Case: SMPD-B, Gate-source voltage: -5...20V, On-state resistance: 34mΩ, Mounting: SMD, Gate charge: 161nC, Kind of package: tube, Kind of channel: enhancement, Semiconductor structure: double series.
Інші пропозиції MCB40P1200LB-TUB за ціною від 16577.40 грн до 17974.43 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||
|---|---|---|---|---|---|---|---|---|---|
| MCB40P1200LB-TUB | IXYS |
 Description: POWER MOSFETConfiguration: 2 N-Channel (Dual) Common Source Mounting Type: Surface Mount Package / Case: 9-SMD Power Module Packaging: Tube Part Status: Active Supplier Device Package: SMPD Current - Continuous Drain (Id) @ 25°C: 58A Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
|
| MCB40P1200LB-TUB |
|
Виробник: IXYS
Description: POWER MOSFET
Configuration: 2 N-Channel (Dual) Common Source
Mounting Type: Surface Mount
Package / Case: 9-SMD Power Module
Packaging: Tube
Part Status: Active
Supplier Device Package: SMPD
Current - Continuous Drain (Id) @ 25°C: 58A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Description: POWER MOSFET
Configuration: 2 N-Channel (Dual) Common Source
Mounting Type: Surface Mount
Package / Case: 9-SMD Power Module
Packaging: Tube
Part Status: Active
Supplier Device Package: SMPD
Current - Continuous Drain (Id) @ 25°C: 58A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
на замовлення 13 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 17974.43 грн |
| 10+ | 16577.40 грн |