MCCD2004-TP

MCCD2004-TP Micro Commercial Components (MCC)


MCCD2004(DFN2030-6)-A-935158.pdf Виробник: Micro Commercial Components (MCC)
MOSFET 10A, 20V Dual N Chan Mosfet,
на замовлення 459 шт:

термін постачання 21-30 дні (днів)
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Технічний опис MCCD2004-TP Micro Commercial Components (MCC)

Description: MOSFET 2N-CH 20V 10A, Packaging: Tape & Reel (TR), Package / Case: 6-WFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 1955pF @ 10V, Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN2030-6, Part Status: Obsolete.

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MCCD2004-TP Виробник : Micro Commercial Components 33mccd2004dfn2030-6-a.pdf Dual N-Channel Power MOSFET
товар відсутній
MCCD2004-TP MCCD2004-TP Виробник : Micro Commercial Co MCCD2004(DFN2030-6)-A.pdf Description: MOSFET 2N-CH 20V 10A
Packaging: Tape & Reel (TR)
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1955pF @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2030-6
Part Status: Obsolete
товар відсутній
MCCD2004-TP MCCD2004-TP Виробник : Micro Commercial Co MCCD2004(DFN2030-6)-A.pdf Description: MOSFET 2N-CH 20V 10A
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1955pF @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2030-6
Part Status: Obsolete
товар відсутній