MCG15P10YHE3-TP Micro Commercial Components (MCC)
| Кількість | Ціна |
|---|---|
| 5+ | 68.67 грн |
| 10+ | 59.60 грн |
| 100+ | 35.30 грн |
| 500+ | 29.54 грн |
| 1000+ | 25.11 грн |
| 2500+ | 23.84 грн |
| 5000+ | 20.18 грн |
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Технічний опис MCG15P10YHE3-TP Micro Commercial Components (MCC)
Description: P-CHANNEL MOSFET, DFN3333, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: DFN3333, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 50W (Tj), Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V.
Інші пропозиції MCG15P10YHE3-TP за ціною від 22.28 грн до 90.19 грн
| Фото | Назва | Виробник | Інформація |
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MCG15P10YHE3-TP | MCC (Micro Commercial Components) |
 Description: P-CHANNEL MOSFET, DFN3333Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Supplier Device Package: DFN3333 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 50W (Tj) Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 4783 шт: термін постачання 21-31 дні (днів) |
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| MCG15P10YHE3-TP |
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Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET, DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: DFN3333
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 50W (Tj)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: P-CHANNEL MOSFET, DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: DFN3333
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 50W (Tj)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 4783 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.19 грн |
| 10+ | 54.47 грн |
| 100+ | 36.01 грн |
| 500+ | 26.36 грн |
| 1000+ | 23.43 грн |
| 2000+ | 22.28 грн |