MCG25P05YHE3-TP Micro Commercial Co

Description: MOSFET, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 48 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: DFN3333, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Power Dissipation (Max): 74W (Tj), Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.