MCG25P05YHE3-TP Micro Commercial Co
Виробник: Micro Commercial CoDescription: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tj)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN3333
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 48 V
Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 30 V
Qualification: AEC-Q101
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Технічний опис MCG25P05YHE3-TP Micro Commercial Co
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V, Power Dissipation (Max): 74W (Tj), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN3333, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 48 V, Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції MCG25P05YHE3-TP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MCG25P05YHE3-TP | Виробник : Micro Commercial Components (MCC) |
MOSFET |
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