MCG50P03-TP

MCG50P03-TP Micro Commercial Co


MCG50P03(DFN3333).pdf Виробник: Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: DFN3333
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 111.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6464 pF @ 15 V
на замовлення 3977 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+63.23 грн
10+ 49.89 грн
100+ 38.79 грн
500+ 30.85 грн
1000+ 25.13 грн
2000+ 23.66 грн
Мінімальне замовлення: 5
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Технічний опис MCG50P03-TP Micro Commercial Co

Description: P-CHANNEL MOSFET,DFN3333, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A, Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V, Power Dissipation (Max): 83W, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: DFN3333, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 111.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6464 pF @ 15 V.

Інші пропозиції MCG50P03-TP

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
MCG50P03-TP Виробник : Micro Commercial Components mcg50p03dfn3333.pdf P-CHANNEL MOSFET
товар відсутній
MCG50P03-TP MCG50P03-TP Виробник : Micro Commercial Co MCG50P03(DFN3333).pdf Description: P-CHANNEL MOSFET,DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: DFN3333
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 111.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6464 pF @ 15 V
товар відсутній
MCG50P03-TP Виробник : Micro Commercial Components (MCC) MCG50P03(DFN3333).pdf MOSFET P-CHANNEL MOSFET
товар відсутній