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MCGWF20P06YHE3-TP

MCGWF20P06YHE3-TP MCC (Micro Commercial Components)

MCGWF20P06YHE3(DFN3333-8(SWF)).pdf
Виробник: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1483 pF @ 25 V
Qualification: AEC-Q101
на замовлення 873 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+201.48 грн
10+125.89 грн
100+92.16 грн
500+73.55 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
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Технічний опис MCGWF20P06YHE3-TP MCC (Micro Commercial Components)

Description: POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V, Power Dissipation (Max): 39W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1483 pF @ 25 V, Qualification: AEC-Q101.

Інші пропозиції MCGWF20P06YHE3-TP

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
MCGWF20P06YHE3-TP MCGWF20P06YHE3-TP MCC (Micro Commercial Components) MCGWF20P06YHE3(DFN3333-8(SWF)).pdf Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1483 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
MCGWF20P06YHE3-TP MCGWF20P06YHE3-TP Micro Commercial Components (MCC) MCGWF20P06YHE3(DFN3333-8(SWF)).pdf MOSFETs P-CHANNEL MOSFET,DFN3333-8(SWF)
товару немає в наявності
В кошику  од. на суму  грн.
MCGWF20P06YHE3-TP MCGWF20P06YHE3(DFN3333-8(SWF)).pdf
MCGWF20P06YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1483 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
MCGWF20P06YHE3-TP MCGWF20P06YHE3(DFN3333-8(SWF)).pdf
MCGWF20P06YHE3-TP
Виробник: Micro Commercial Components (MCC)
MOSFETs P-CHANNEL MOSFET,DFN3333-8(SWF)
товару немає в наявності
В кошику  од. на суму  грн.