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MCGWF60N04YHE3-TP

MCGWF60N04YHE3-TP MCC (Micro Commercial Components)

MCGWF60N04YHE3(DFN3333-8(SWF)).pdf
Виробник: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 93W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2144 pF @ 20 V
Qualification: AEC-Q101
на замовлення 4414 шт:
термін постачання 21-31 дні (днів)
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Технічний опис MCGWF60N04YHE3-TP MCC (Micro Commercial Components)

Description: POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V, Power Dissipation (Max): 93W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DFN3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2144 pF @ 20 V, Qualification: AEC-Q101.

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MCGWF60N04YHE3-TP MCGWF60N04YHE3-TP MCC (Micro Commercial Components) MCGWF60N04YHE3(DFN3333-8(SWF)).pdf Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 93W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2144 pF @ 20 V
Qualification: AEC-Q101
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MCGWF60N04YHE3-TP MCGWF60N04YHE3-TP Micro Commercial Components (MCC) MCGWF60N04YHE3(DFN3333-8(SWF)).pdf MOSFETs N-CHANNEL MOSFET,DFN3333-8(SWF)
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MCGWF60N04YHE3-TP MCGWF60N04YHE3(DFN3333-8(SWF)).pdf
MCGWF60N04YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 93W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2144 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
MCGWF60N04YHE3-TP MCGWF60N04YHE3(DFN3333-8(SWF)).pdf
MCGWF60N04YHE3-TP
Виробник: Micro Commercial Components (MCC)
MOSFETs N-CHANNEL MOSFET,DFN3333-8(SWF)
товару немає в наявності
В кошику  од. на суму  грн.