MCGWF60N06YHE3-TP MCC (Micro Commercial Components)
Виробник: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 30 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 5000+ | 66.40 грн |
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Технічний опис MCGWF60N06YHE3-TP MCC (Micro Commercial Components)
Description: POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 60W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції MCGWF60N06YHE3-TP за ціною від 68.36 грн до 227.85 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MCGWF60N06YHE3-TP | Micro Commercial Components (MCC) |
MOSFETs N-CHANNEL MOSFET,DFN3333-8(SWF) |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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MCGWF60N06YHE3-TP | MCC (Micro Commercial Components) |
Description: POWER MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 60W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| MCGWF60N06YHE3-TP |
|
Виробник: Micro Commercial Components (MCC)
MOSFETs N-CHANNEL MOSFET,DFN3333-8(SWF)
MOSFETs N-CHANNEL MOSFET,DFN3333-8(SWF)
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.99 грн |
| 10+ | 143.15 грн |
| 100+ | 86.50 грн |
| 500+ | 73.14 грн |
| 1000+ | 70.18 грн |
| 2500+ | 68.36 грн |
| MCGWF60N06YHE3-TP |
|
Виробник: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 30 V
Qualification: AEC-Q101
Description: POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 227.85 грн |
| 10+ | 142.77 грн |
| 100+ | 98.97 грн |
| 500+ | 75.32 грн |
| 1000+ | 73.45 грн |