Технічний опис MCH3109-TL-E ON Semiconductor
Description: TRANS PNP 30V 3A 3-MCPH, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 155mV @ 75mA, 1.5A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Frequency - Transition: 380MHz, Supplier Device Package: 3-MCPH, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 800 mW.
Інші пропозиції MCH3109-TL-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MCH3109-TL-E | Виробник : onsemi |
 Description: TRANS PNP 30V 3A 3-MCPHPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 155mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 380MHz Supplier Device Package: 3-MCPH Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
товару немає в наявності |
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MCH3109-TL-E | Виробник : onsemi |
Description: TRANS PNP 30V 3A 3-MCPH Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 155mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 380MHz Supplier Device Package: 3-MCPH Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
товару немає в наявності |