MCH6321-TL-W onsemi
Виробник: onsemi
Description: MOSFET P-CH 20V 4A 6MCPH
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-MCPH
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 83mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Bulk
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Технічний опис MCH6321-TL-W onsemi
Description: MOSFET P-CH 20V 4A 6MCPH, Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-MCPH, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 83mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції MCH6321-TL-W
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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MCH6321-TL-W | onsemi |
Description: MOSFET P-CH 20V 4A 6MCPH Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-MCPH Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 83mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| MCH6321-TL-W |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 4A 6MCPH
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-MCPH
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 83mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 4A 6MCPH
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-MCPH
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 83mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.