Технічний опис MCP130N10YA-BP Micro Commercial Components
Description: MOSFET N-CHANNEL MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 65A, 10V, Power Dissipation (Max): 310W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB (H), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V.
Інші пропозиції MCP130N10YA-BP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MCP130N10YA-BP | Виробник : Micro Commercial Components |
 N-Channel Enhancement Mode Field Effect Transistor |
товару немає в наявності |
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MCP130N10YA-BP | Виробник : Micro Commercial Co |
Description: MOSFET N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 65A, 10V Power Dissipation (Max): 310W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB (H) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V |
товару немає в наявності |
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| MCP130N10YA-BP | Виробник : Micro Commercial Components (MCC) |
MOSFETs |
товару немає в наявності |