MCU110N06YA-TP MCC (Micro Commercial Components)
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DPAK
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 89W
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис MCU110N06YA-TP MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DPAK, Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 89W, Rds On (Max) @ Id, Vgs: 4.4mOhm @ 55A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції MCU110N06YA-TP
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
MCU110N06YA-TP | MCC (Micro Commercial Components) |
Description: N-CHANNEL MOSFET,DPAK Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 89W Rds On (Max) @ Id, Vgs: 4.4mOhm @ 55A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MCU110N06YA-TP | Micro Commercial Components (MCC) |
MOSFETs |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| MCU110N06YA-TP |
|
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DPAK
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 89W
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: N-CHANNEL MOSFET,DPAK
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 89W
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| MCU110N06YA-TP |
|
Виробник: Micro Commercial Components (MCC)
MOSFETs
MOSFETs
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.