MCU3D8N04YHQ-TP MCC (Micro Commercial Components)
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1745 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 83W (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
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Технічний опис MCU3D8N04YHQ-TP MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1745 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 3.8V @ 250µA, Power Dissipation (Max): 83W (Tj), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101.
Інші пропозиції MCU3D8N04YHQ-TP за ціною від 52.40 грн до 115.72 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MCU3D8N04YHQ-TP | MCC (Micro Commercial Components) |
Description: N-CHANNEL MOSFET,DPAK Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1745 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 83W (Tj) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
| MCU3D8N04YHQ-TP |
|
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1745 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 83W (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Description: N-CHANNEL MOSFET,DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1745 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 83W (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.72 грн |
| 10+ | 92.59 грн |
| 100+ | 70.88 грн |
| 500+ | 53.48 грн |
| 1000+ | 52.40 грн |