MD120HFR120C2S STARPOWER
Виробник: STARPOWER
Description: STARPOWER - MD120HFR120C2S - Siliziumkarbid-MOSFET, Siliziumkarbid, Halbbrücke, Zweifach n-Kanal, 200 A, 1.2 kV, 0.01 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 200A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Verlustleistung Pd: -
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Halbbrücke
euEccn: NLR
Verlustleistung: -
Bauform - Transistor: Module
Anzahl der Pins: -
Produktpalette: -
productTraceability: No
Wandlerpolarität: Zweifach n-Kanal
Kanaltyp: Zweifach n-Kanal
Betriebswiderstand, Rds(on): 0.01ohm
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.01ohm
SVHC: No SVHC (27-Jun-2018)
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Технічний опис MD120HFR120C2S STARPOWER
Description: STARPOWER - MD120HFR120C2S - Siliziumkarbid-MOSFET, Siliziumkarbid, Halbbrücke, Zweifach n-Kanal, 200 A, 1.2 kV, 0.01 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 200A, hazardous: false, rohsPhthalatesCompliant: YES, usEccn: EAR99, Verlustleistung Pd: -, Gate-Source-Schwellenspannung, max.: 5.6V, MOSFET-Modul-Konfiguration: Halbbrücke, euEccn: NLR, Verlustleistung: -, Bauform - Transistor: Module, Anzahl der Pins: -, Produktpalette: -, productTraceability: No, Wandlerpolarität: Zweifach n-Kanal, Kanaltyp: Zweifach n-Kanal, Betriebswiderstand, Rds(on): 0.01ohm, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.01ohm, SVHC: No SVHC (27-Jun-2018).
Інші пропозиції MD120HFR120C2S
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| MD120HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Technology: SiC Drain current: 120A Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: -4...20V On-state resistance: 15mΩ Topology: MOSFET half-bridge Pulsed drain current: 548A Type of semiconductor module: MOSFET transistor |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. |
| MD120HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Technology: SiC
Drain current: 120A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: -4...20V
On-state resistance: 15mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 548A
Type of semiconductor module: MOSFET transistor
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Technology: SiC
Drain current: 120A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: -4...20V
On-state resistance: 15mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 548A
Type of semiconductor module: MOSFET transistor
товару немає в наявності
Мінімальне замовлення: 12 шт
В кошику
од. на суму грн.