MD200HFR120C2S STARPOWER
Виробник: STARPOWER
Description: STARPOWER - MD200HFR120C2S - Siliziumkarbid-MOSFET, Siliziumkarbid, Halbbrücke, Zweifach n-Kanal, 299 A, 1.2 kV, 8700 µohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 299A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Halbbrücke
euEccn: NLR
Verlustleistung: -
Bauform - Transistor: Modul
Anzahl der Pins: -
Produktpalette: -
productTraceability: No
Kanaltyp: Zweifach n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 8700µohm
SVHC: To Be Advised
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Технічний опис MD200HFR120C2S STARPOWER
Description: STARPOWER - MD200HFR120C2S - Siliziumkarbid-MOSFET, Siliziumkarbid, Halbbrücke, Zweifach n-Kanal, 299 A, 1.2 kV, 8700 µohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 299A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5.6V, MOSFET-Modul-Konfiguration: Halbbrücke, euEccn: NLR, Verlustleistung: -, Bauform - Transistor: Modul, Anzahl der Pins: -, Produktpalette: -, productTraceability: No, Kanaltyp: Zweifach n-Kanal, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 8700µohm, SVHC: To Be Advised.
Інші пропозиції MD200HFR120C2S
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| MD200HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Gate-source voltage: ±20V On-state resistance: 10mΩ Drain current: 200A Drain-source voltage: 1.2kV Pulsed drain current: 822A Electrical mounting: FASTON connectors; screw Technology: SiC Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. |
| MD200HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Drain current: 200A
Drain-source voltage: 1.2kV
Pulsed drain current: 822A
Electrical mounting: FASTON connectors; screw
Technology: SiC
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Drain current: 200A
Drain-source voltage: 1.2kV
Pulsed drain current: 822A
Electrical mounting: FASTON connectors; screw
Technology: SiC
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику
од. на суму грн.