Технічний опис MDD142-12N1 Littelfuse
Description: DIODE MODULE GP 1200V 165A Y4-M6, Packaging: Box, Package / Case: Y4-M6, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 165A, Supplier Device Package: Y4-M6, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A, Current - Reverse Leakage @ Vr: 20 mA @ 1200 V.
Інші пропозиції MDD142-12N1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MDD142-12N1 | Виробник : IXYS |
 Description: DIODE MODULE GP 1200V 165A Y4-M6Packaging: Box Package / Case: Y4-M6 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 165A Supplier Device Package: Y4-M6 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Current - Reverse Leakage @ Vr: 20 mA @ 1200 V |
товару немає в наявності |
||
 |
MDD142-12N1 | Виробник : IXYS |
Discrete Semiconductor Modules 142 Amps 1200V |
товару немає в наявності |
|
| MDD142-12N1 | Виробник : IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.05V Load current: 165A Max. forward impulse current: 4.7kA Max. off-state voltage: 1.2kV Case: Y4-M6 |
товару немає в наявності |