Технічний опис MDD600-14N1 IXYS
Description: DIODE MODULE GEN PURP 1400V 883A, Current - Reverse Leakage @ Vr: 50 mA @ 1400 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1800 A, Voltage - DC Reverse (Vr) (Max): 1400 V, Operating Temperature - Junction: -40°C ~ 125°C, Current - Average Rectified (Io) (per Diode): 883A, Diode Configuration: 1 Pair Series Connection, Technology: Standard, Reverse Recovery Time (trr): 18 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Інші пропозиції MDD600-14N1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MDD600-14N1 | IXYS |
Description: DIODE MODULE GEN PURP 1400V 883A Current - Reverse Leakage @ Vr: 50 mA @ 1400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1800 A Voltage - DC Reverse (Vr) (Max): 1400 V Operating Temperature - Junction: -40°C ~ 125°C Current - Average Rectified (Io) (per Diode): 883A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 18 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |
|
MDD600-14N1 | IXYS |
Discrete Semiconductor Modules |
товару немає в наявності |
В кошику од. на суму грн. |
| MDD600-14N1 |
Виробник: IXYS
Description: DIODE MODULE GEN PURP 1400V 883A
Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1800 A
Voltage - DC Reverse (Vr) (Max): 1400 V
Operating Temperature - Junction: -40°C ~ 125°C
Current - Average Rectified (Io) (per Diode): 883A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 18 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: DIODE MODULE GEN PURP 1400V 883A
Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1800 A
Voltage - DC Reverse (Vr) (Max): 1400 V
Operating Temperature - Junction: -40°C ~ 125°C
Current - Average Rectified (Io) (per Diode): 883A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 18 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| MDD600-14N1 |
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Виробник: IXYS
Discrete Semiconductor Modules
Discrete Semiconductor Modules
товару немає в наявності
В кошику
од. на суму грн.



