MDMA360UB1600PTED IXYS
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис MDMA360UB1600PTED IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 175A, Case: E2-Pack, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 400A, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції MDMA360UB1600PTED
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Ціна без ПДВ |
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MDMA360UB1600PTED | Виробник : IXYS | Description: BIPOLARMODULE-RECTIFIER+BRAKE E2 |
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MDMA360UB1600PTED | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 175A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 400A Mechanical mounting: screw |
товар відсутній |