Технічний опис MDMA360UB1600PTED IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Gate-emitter voltage: ±20V, Collector current: 175A, Pulsed collector current: 400A, Max. off-state voltage: 1.2kV, Topology: boost chopper; NTC thermistor; three-phase diode bridge, Semiconductor structure: diode/transistor, Case: E2-Pack, Type of semiconductor module: IGBT, Electrical mounting: Press-in PCB, Mechanical mounting: screw.
Інші пропозиції MDMA360UB1600PTED
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MDMA360UB1600PTED | Виробник : IXYS | Discrete Semiconductor Modules BIPOLAR MODULE-RECT+BRAKE |
товару немає в наявності |
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| MDMA360UB1600PTED | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Gate-emitter voltage: ±20V Collector current: 175A Pulsed collector current: 400A Max. off-state voltage: 1.2kV Topology: boost chopper; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Case: E2-Pack Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw |
товару немає в наявності |