Технічний опис MDNA210UB2200PTED IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw, Mechanical mounting: screw, Type of semiconductor module: IGBT, Case: E2-Pack, Semiconductor structure: diode/transistor, Topology: boost chopper; NTC thermistor; three-phase diode bridge, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Max. off-state voltage: 1.7kV, Electrical mounting: Press-in PCB.
Інші пропозиції MDNA210UB2200PTED
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MDNA210UB2200PTED | Виробник : IXYS |
 Diode Modules BipolarModule-Rectifier+Brake E2-Pk-PFP |
товару немає в наявності |
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| MDNA210UB2200PTED | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Mechanical mounting: screw Type of semiconductor module: IGBT Case: E2-Pack Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.7kV Electrical mounting: Press-in PCB |
товару немає в наявності |