MF10H100HE3_B/P Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SCHOTTKY 100V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис MF10H100HE3_B/P Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 A, Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції MF10H100HE3_B/P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MF10H100HE3_B/P | Виробник : Vishay General Semiconductor |
Schottky Diodes & Rectifiers 100V 250A AEC-Q101 |
товару немає в наявності |